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Power/Alternative Energy??

Hitachi MOSFETs offer reduced on-resistance

Posted: 11 Jun 2002 ?? ?Print Version ?Bookmark and Share

Keywords:hat2164h? hat2165h? n channel mosfet? power mosfet? metal oxide semiconductor fet?

Hitachi Ltd's 8th-generation N-channel power MOSFETs is manufactured on a 0.355m process, and features reduced cell sizes by up to 70 percent and on-resistance by up to 45 percent, compared to the company's previous products.

Suitable for use in dc/dc converters found in routers, servers, and notebook PCs, the MOSFETs offer a 4.5V drive capability at drain-source breakdown voltage of 30V.

The HAT2164H offers an on-resistance of 3 milliohms at a Vgs of 4.5V40 percent lower than previous productsand further reduces it to 2.5 milliohms at a Vgs of 10V.

The HAT2165H achieves the figure-of-merit (FOM) of on-resistance by gate-drain charge of 37 milliohms nC at a Vgs of 4.5V45 percent lower than the company's earlier products. At a Vgs of 10V, the device attains an FOM of 28.5 millohms nC.

Both MOSFETs are packaged in the company's surface-mount LFPAK package, which occupies the same footprint as an SOP-8 casing.





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