Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
?
EE Times-Asia > Power/Alternative Energy
?
?
Power/Alternative Energy??

IR MOSFETs target ZVS power supplies

Posted: 11 Dec 2002 ?? ?Print Version ?Bookmark and Share

Keywords:international rectifier? l series? hexfet? power mosfet? zvs power supply?

International Rectifier's L-Series of 500V HEXFET power MOSFETs feature fast recovery body diodes for the reliable operation of zero-voltage switching (ZVS) power supplies, especially at light loads.

Zero-voltage switching is emerging as the power supply design of choice for high current power supplies. The company claims that power supplies using ZVS circuits operate more efficiently at high frequencies, reducing passive component size, while increasing power density.

When MOSFETs are used in ZVS circuits operating at frequencies up to 250kHz, body diode reverse recovery characteristics become critical, especially under light load conditions when the MOSFET on-time is very short. MOSFETs can only withstand voltage across its drain and source after the integral body diode has completed the reverse recovery period. The reverse recovery time of the integral body diode has a direct impact on the minimum duty cycle.

The L-Series has a reverse recovery time of 250ns and reduces diode reverse recovery charge by up to 70 percent, thereby reducing switching losses. The series is also claimed to have three times better diode peak recovery immunity compared to standard devices.

The MOSFETs also eliminate the need for series Schottky and anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, and further reducing overall losses and improving power density.





Article Comments - IR MOSFETs target ZVS power supplies
Comments:??
*? You can enter [0] more charecters.
*Verify code:
?
?
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

?
?
Back to Top