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Memory/Storage??

NVE tapped by Darpa for MRAM development

Posted: 06 Aug 2003 ?? ?Print Version ?Bookmark and Share

Keywords:nve? mram? memory? darpa?

NVE Corp. has been signed by the Defense Advanced Research Projects Agency (Darpa), administered by the U.S. Army Aviation and Missile Command, to develop magneto-thermal Magnetic Random Access Memory (MRAM) devices. The contract is for $750,000 over two years and represents a continuation of NVE's government funding to advance and commercialize MRAM.

MRAM uses "spintronics" - electrons' spin rather than their charge - to store data, and is fabricated using nanotechnology. MRAM has the potential of combining the speed of semiconductor memory with the non-volatility of magnetic disk drives, and could eventually replace conventional memories. MRAM is inherently non-volatile, meaning the data remain even when power is removed.

"For MRAM to supplant DRAM in mainstream applications, both cell size and write current need to be reduced," commented NVE president and CEO Daniel A. Baker, PhD. "Magneto-thermal MRAM addresses both issues, strengthening the promise of MRAM as the ideal memory. This contract will help bolster our intellectual property portfolio in this important area."





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