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Philips develops technology to push 3G cellular networks

Posted: 10 Nov 2003 ?? ?Print Version ?Bookmark and Share

Keywords:Philips? LDMOS technology? 3G cellular base stations? RF? power transistors?

Royal Philips Electronics has announced a breakthrough in LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology that is expected to reduce the complexity and operating costs of 3G cellular base stations while at the same time enhancing their performance and reliability.

According to Philips, RF power transistors fabricated using its new 4G LDMOS technology are expected to operate with higher gain and higher operating efficiencies than existing LDMOS devices. As a result, fewer gain stages are needed in RF power amplifiers and less operating energy is wasted.

"With our 4th generation LDMOS technology we have given RF power amplifier designers the extra design space they need to overcome difficult efficiency versus linearity trade-offs," said Rick Dumont, marketing manager for LDMOS RF Power Devices at Philips Semiconductors. "These new devices will make it significantly easier to meet the performance requirements of systems such as W-CDMA at the price points demanded by the telecommunications industry."

The first power transistors to utilize this LDMOS technology are being sampled in the 4th quarter of this year and will be ready for volume production in the 1st quarter of next year.





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