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Hi-Sincerity FETs provide improved voltage-blocking

Posted: 12 Nov 2003 ?? ?Print Version ?Bookmark and Share

Keywords:hi-sincerity microelectronics? h07n60af? power field effect transistor?

Hi-Sincerity Microelectronics Corp. has released its H07N60AF series of n-channel power field effect transistors (FETs) in TO-220FP packaging. The company claims that an advanced termination scheme is used to provide enhanced voltage-blocking capability without degrading performance over time.

The FETs are designed to withstand high energy conditions in avalanche and commutation modes, and offer a drain-to-source diode with a fast recovery time. Suitable for use in high-voltage high-speed switching applications including power supplies, converters and PWM motor controllers, the devices feature a drain to current (continuous) of 7A, a drain to current (pulsed) of 18A, gate-to-source voltage (continuous) of 20V, and gate-to-source voltage (non-repetitive) of 40V.

Other specifications include total power of 125W, derate of about 25C of 1W/C, and an operating temperature range and a storage temperature range of -55C to 150C.





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