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Vishay IR emitters offer improved radiant intensity

Posted: 10 Aug 2004 ?? ?Print Version ?Bookmark and Share

Keywords:infrared emitter? vishay intertechnology? tsff5410? tsff5210? tsmf4710?

Vishay Intertechnology Inc. has developed a new family of high-speed infrared (IR) emitters that offer outstanding levels of radiant power and intensity.

Built on double hetero chip GaAlAs/GaAlAs technology, the new IR emitters offer improvements of up to 43 percent in radiant intensity compared with previous-generation devices, extending the range and reliability of IR data transmission and light barrier systems in the automotive, consumer and industrial environments.

For free air data transmission systems with high modulation frequencies or high data transmission rate requirements, such as IR video data transmission between camcorders and TV sets, the company is offering two new emitters in the 5mm round plastic T-13/4 package. The TSFF5410 combines a 22 angle of half intensity with typical radiant intensity of 70mW/sr, while the TSFF5210 combines a 10 angle of half intensity with radiant intensity of 180mW/sr. Both devices feature a high modulation bandwidth of 23MHz and typical rise and fall times of 15ns.

For applications where a space-saving surface-mount device is required, Vishay is introducing two devices in the miniature PLCC-2 SMD package. Both devices offer a 60 angle of half intensity and typical radiant intensity of 10mW/sr, with typical rise and fall times of 15ns for the TSMF4710 (with 23MHz modulation bandwidth) and 30ns for the TSMF3710 (with 12MHz modulation bandwidth).

Samples of all IR emitters are available. Production quantities will be available in Q3 2004 with lead times of 12 weeks for larger orders.





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