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NEC unveils method for utilizing CNT

Posted: 07 Sep 2004 ?? ?Print Version ?Bookmark and Share

Keywords:nec? carbon nanotube? electron beam? lithography? electronic devices?

NEC Corp. has developed a diameter/position-controlled carbon nanotube (CNT) growth technique that is based on conventional electron beam (EB) lithography. This technique is expected to provide a practical method for controlling the position and diameter of each CNT. NEC expects this result will promote the R&D of high-performance CNT electronic devices.

Using this lithographically-directed nanoparticles synthesis method, iron particles having a 1.7nm0.6(?) distribution were successfully patterned at a 100nm pitch within a positioning accuracy of 5nm. CNTs were grown by CVD at 750deg;C using ethanol. As a result a CNT diameter distribution of 1.3nm0.4 was obtained. NEC has already confirmed that the growing direction of CNTs can be controlled by applying an electric field during CVD growth. These techniques will enable NEC to grow CNTs with individually controlled position, diameter and orientation.

These results are expected to promote the research and development of CNT transistors as high-performance electrical devices. NEC will continue to work on advancements in CNT control technology, electric characteristic control, device structure design, and fabrication process development with the aim of realizing a CNT transistor by 2010.





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