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Power FET 'revolutionizes switching devices'

Posted: 20 Dec 2004 ?? ?Print Version ?Bookmark and Share

Keywords:matsushita electric? transistor? switching device? aigan/dan? power fet?

Matsushita Electric Ind. Co. Ltd claims its new transistor revolutionizes switching devices.

According to the company, its new aluminum gallium nitride/gallium nitride (AlGaN/GaN) power field effect transistor (FET) is fabricated on an inexpensive silicon, and uses Matsushita's own crystal growing technology and GaN materials that have over 10 times the breakdown voltage and below 1/5 lower resistance of existing silicon (Si) As a result, the press release said, the device has achieved a 350V breakdown voltage, same as Si power metal-oxide-semiconductors (MOS), a very low specific on-state resistance of 1.9 milliohms cm? (below 1/10 of Si power MOS), and high-speed power switching of less than 0.1ns (below 1/100 of Si power MOS). The transistor also features a current handling capability of 150A (over five times that of Si power MOS).

Additionally, the new product can be used as a lowloss power switching device in applications like inverters for home electric appliances, hybrid cars and switching power supplies.

Just one of these new transistors can substitute more than 10 parallel-connecting Si power MOSFETs, contributing significantly to power savings and miniaturization of electronic products, the company said. By adopting silicon substrates, the material cost is reduced to less than 1/100 of silicon carbide (SiC) power MOSFETs.

Matsushita explained that an AlN/AlGaN buffer layer grown at a high temperature and an AlN/GaN multi-layer film are used on the first layer to reduce defect density on the Si substrate and improve the heterojunction interface quality. The GaN growth technology was developed by Matsushita in partnership with Prof. Takashi Egawa of the Research Center for Nano-Device and System, Nagoya Institute of Technology, and is said to have been vital in making the new high power AlGaN/GaN FET.

According to the press release, Matsushita has applied for 39 patents in Japan and 26 patents overseas on the new transistor.




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