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Samsung's 70nm 4Gb NAND flash device writes data at 16MBps

Posted: 02 Jun 2005 ?? ?Print Version ?Bookmark and Share

Keywords:samsung electronics? nand flash device?

Samsung Electronics Co. Ltd disclosed that they have already begun mass producing what it touts as the highest density NAND flash device yet to take advantage of advanced 70nm process technology. According to the press release, the faster technology offers larger storage densities for consumer and mobile applications at more affordable pricing.

Samsung added that the use of 70nm design technology to produce the 4Gb NAND flash enables them to offer the industry's smallest memory cell size0.025?m. An advanced Argon fluoride photo-lithography light source has been deployed to etch the finer circuitry permitted by the 70nm process.

The new 70nm 4Gb NAND flash writes data at 16MBps, which is said to be a 50 percent improvement over the 90nm 2Gb device.

Market research firm Gartner Dataquest forecasts that in 2005, 4Gb NAND flash will account for more than 30 percent of total expected sales of $8 billion in NAND flash memory.



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