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Memory/Storage??

Seiko rolls 'flexible' TFT-SRAM

Posted: 03 Oct 2005 ?? ?Print Version ?Bookmark and Share

Keywords:seiko Epson? flexible tft-sram?

Seiko Epson Corp. disclosed that it had developed the world's first flexible TFT-SRAM (16Kb). With a supply voltage of 3V to 6V, this TFT-SRAM offers short access time, which is realized by integrating a sense amplifier onto a flexible substrate, and includes one cell that consists of six transistors. This device can be used as the working memory for ACT11, the company's original asynchronous 8-bit microprocessor.

To develop the TFT-SRAM, Epson said they used its technologies to integrate all the circuit blocks that make up the memory into a single chip on a plastic substrate. The result is a TFT-SRAM that operates stably at high speed and at low voltage.

Using its experience in developing compact, energy-saving electronic devices and technical expertise, the company has now set itself to develop devices that are thin, light and flexible. To achieve this aim, Epson has developed the low temperature poly-Si technology using thin film formation, and SUFTLA, which allows the transfer of TFT circuits from a glass substrate onto flexible substrates.

The company expects its flexible TFT-SRAM to be adopted in the near future as a key component for small, light and flexible electronic devices.




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