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Oki Electric develops GaN-HEMT

Posted: 18 Oct 2005 ?? ?Print Version ?Bookmark and Share

Keywords:oki electric? gallium nitrate? GaN-HEMT? power transistor?

Oki Electric Industry Co., Ltd disclosed the development of Gallium Nitrate High Electron Mobility Transistor (GaN-HEMT), a power transistor with improved amplifying characteristics, at the 208th Meeting of the Electrochemical Society.

GaN-HEMT is formed on a large diameter silicon substrate, achieving a world record for transconductance rating of 350mS/mm, with a maximum occillation frequency (fmax) of 115GHz. Since it is achieved on a silicon wafer, and not on conventional Silicon Carbide (SiC), it can approximately reduce its cost to half.

Power transistors using GaN were usually developed on a SiC substrate for its advantage of easy crystal growth but have also shown poor quality on boards, difficulty to shift to larger diameters and expensive substrate costs. With the HEMT of the new device, which grows the AlGaN/GaN structure on the silicon substrate with very few defect, the cost is dramatically reduced.

Another feature of the technology is its achievement of a 56GHz current gain cut-off frequency. This is another improvement from the previous GaN-HEMNT on silicon substrate devices, which had a range of 70GHz to 80GHz fmaz and achieves a performance equivalent to GaN-HEMT on SiC substrates.

"Succeeding in improving amplifying characteristics for power transistors is an exciting achievement for Oki, as the market has been in need of smaller and lower power consumption wireless communication systems," said Harushige Sugimoto, Senior Vice President and Chief Technology Officer of Oki Electric. He added that enhancing higher output of transistors based on the GaN-HEMT techonology, they can contribute to the acceleration of WiMAX and next generation wireless communication systems.

GaN-HEMT was jointly developed with the Research Center for Micro-Structure Devices at the Nagoya Institute of Technology, with the support form The Research Promotion Bureau of Japan's Ministry of Education, Culture, Sports, Science and Technology.





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