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E- beam device spots defects in FEOL, BEOL apps

Posted: 08 Feb 2006 ?? ?Print Version ?Bookmark and Share

Keywords:eS32? e-beam inspection? KLA-Tencor?

KLA-Tencor introduced the eS32, an extension of its e-beam inspection platform. The eS32 is designed to capture electrical and small physical defects, which are arising as chipmakers integrate new materials and device architectures into volume production. The company said that eS32 can accelerate the detection and resolution of systematic, yield-limiting defects in both front-end-of-line (FEOL) and back-end-of-line applications.

DRAM manufacturers face shorter product lifecycles and are increasingly focused on ramping new processes into high volume production. As these manufacturers scale to increasingly smaller cells, explained KLA-Tencor, they face FEOL and interconnect challengesfrom inspecting higher aspect ratio vias and capacitors to addressing the increasing yield impact of small physical defects. The eS32 promises to identify critical defect mechanisms impacting DRAM manufacturers.

According to the press release, the eS32 incorporates advancements in physical and voltage contrast sensitivity to enable faster time to root cause. Landing energy range has been extended to enhance capture of slight under-etch contact defects. Beam current and scanning flexibility options have been designed for use on highly resistive materials and to capture subtle buried shorts associated with nickel silicide and strained silicon integration. The capture of small physical defects in dense, high aspect ratio structures are said to have been improved with the addition of a smaller pixel. In addition, the eS32 is integrated with advanced binning algorithms, which aim to help chipmakers accelerate root cause analysis, and identify and resolve new systematic defect mechanisms. The eS32 supports KLA-Tencor's proprietary MicroLoop methodology, which promises to accelerate yield learning by 50 percent.

Volume shipments of the eS32 are already underway.




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