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HEXFET MOSFETs meet small size, high efficiency requirements

Posted: 12 May 2006 ?? ?Print Version ?Bookmark and Share

Keywords:International Rectifier? IRF7835? IRF7836? HEXFET? MOSFET?

International Rectifier (IR) introduced the IRF7835PbF and IRF7836PbF, 30V synchronous buck HEXFET MOSFETs for DC/DC synchronous point-of-load (POL) converters. The SO-8 synchronous MOSFETs are designed for applications where requirements of small size, high efficiency and improved thermal conduction resulting in increased power density are desired, such as notebook microprocessor power supplies and POL converters used in high-end servers, as well as advanced telecom and datacom systems.

According to IR, reducing total gate charge (Qg) up to 25 percent, optimizing the body diode losses and maintaining similar RDS(on) performance as previous devices, improves critical light-load efficiency in battery-operated systems by as much as 1.5 percent.

The new IRF7835PbF targets the latest generation of mobile processors requiring a thermal design current of 35A from a two-phase voltage regulator using one control and two synchronous MOSFETs per phase. The device may be used in applications up to 11A per MOSFET. The new IRF7836PbF is designed for power rails using a single control and a single synchronous MOSFET, and may be used in applications up to 9A per MOSFET.

Jeff Sherman, senior marketing manager of IR's portable computing solutions, said that the new 30V HEXFET devices offer low RDS(on) and Qg, "ideally suited for point-of-load synchronous buck converter applications between 6A and 11A per MOSFET." He added that the low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.

The IRF7835 synchronous FET is priced at 76 cents each, the IRF7836 synchronous FET at 65 cents, both for 10,000-unit quantities. These RoHS-compliant 30V HEXFET MOSFETs are already available.




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