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CVD system enables low-temperature processing

Posted: 06 Oct 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Tokyo Electron? TEL? Trias LT Ti/TiN? CVD system? chemical vapor deposition?

Tokyo Electron (TEL) has announced its latest 300mm metal chemical vapor deposition (CVD) system, the Trias LT Ti/TiN. The new system enables deposition of Titanium (Ti) and Titanium Nitride (TiN) films in low temperature process regimes.

Based on the industry-proven Trias platform, TEL said the new system meets the increasing demands for low temperature processing required in the manufacture of nickel silicide contacts. The system incorporates an enhanced shower head design, which allows wafer temperature control over a wide range of deposition temperatures.

By applying the company's novel processing technology and improved shower head design to contact processing, TEL said Trias LT achieves improvements in barrier metal step coverage while enabling low contact resistance and reduced junction leakage. In addition, the Trias LT promises excellent film uniformity, improved repeatability and enhanced particle performance.

"As we move toward 45nm contacts, the unique low temperature processing technology offered by TEL's new metal CVD system will enable customers to extend the range of processing applications for next generation devices and beyond," said Kenji Washino, general manager for TEL's single wafer deposition business unit.




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