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Infineon unveils power-saving transistor architecture

Posted: 15 Jun 2007 ?? ?Print Version ?Bookmark and Share

Keywords:Infineon chips? multi-gate transistors? transistor architecture? MugFETs?

Infineon Technologies AG has announced a power-saving breakthrough in transistor architecture known as multigate field-effect transistor (MugFETs) technology. The German chipmaker said its researchers are the first to integrate multigate transistors with enhanced high-k gate dielectrics and metal gate in highly complex digital circuits with record switching speed, leakage power and switching power efficiency.

The integrated multigate transistors can offer a more than 10 times reduction in off current and 50 percent reduction in transistor switching power compared to today's 65nm transistors.

Hermann Eul, who heads Infineon's Communication Solutions business group, expects the technology to help remove many of the barriers to the production of smaller, more powerful electronic devices and circuits.

"We have measured a quiescent current that is a factor 10 lower than in today's integrated circuits. That doubles the energy efficiency and battery life of mobile devices," said Eul, who is also a member of the Infineon Management Board. "These efforts give us high confidence that the integration of multigate transistors combined with our leading know-how about applications will result in cost-effective solutions and power sensitive applications, extending battery life for consumers using mobile devices substantially."

Infineon unveiled details of its research on MugFETs at this week's VLSI Technology Symposium in Kyoto, Japan.




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