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RF power transistors overcome Doherty limits

Posted: 05 Jul 2007 ?? ?Print Version ?Bookmark and Share

Keywords:RF transistor? Doherty amplifier? low-power base stations?

Freescale Semiconductor Inc. has released a new family of RF LDMOS power transistors tailored for wireless base stations.

The new offering is said to deliver exceptional performance and enable W-CDMA and CDMA2000 base station transmitters to exploit the full potential of the Doherty amplifier architecture.

The Doherty architecture offers exceptional efficiency but presents design challenges due to conflicting requirements for both high efficiency and high linearity, said Freescale. The new devices are said to address these challenges, enabling the creation of base stations that consume significantly less power than those using traditional transistor designs.

Two of the devices operate in the 865-960MHz band, two in the 1930-1990MHz band and three in the 2110-2170MHz band, covering the most popular cellular, PCS and W-CDMA frequencies.

Available on tape-and-reel, all of the devices operate from a 28V supply and feature integral ESD protection. They are designed to handle a 5:1 VSWR without damage and housed in RoHS-compliant, high-thermal-conductibility air-cavity ceramic packages.

Samples of the new RF transistors are available now.

- Gina Roos
eeProductCenter




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