Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
?
EE Times-Asia > RF/Microwave
?
?
RF/Microwave??

GaAs FET amp targets European WiMAX transceiver stations

Posted: 26 Nov 2007 ?? ?Print Version ?Bookmark and Share

Keywords:WiMAX? transceiver? GaAs FET amplifier?

Mitsubishi Electric Corp. has developed an internally impedance matched high output power GaAs FET for 3.6GHz band WiMAX base transceiver stations in the Czech Republic, Poland and other regions in Central and Eastern Europe.

The device operates at low electric current with reduced distortion, which leads to lower power consumption and smaller size and higher performance base transceiver stations.

MGFC47B3436B offers 8dB lower distortion at low electric current, lower power consumption in base transceiver stations. Signal waveform distortion produces feedback in adjacent channels when power amplifiers are operated at low current, so there is a trade-off between current and distortion. Mitsubishi Electric has been able to reduce distortion by 8dB to 1/6 of previous equivalent output power models at a low electric current (1.5A), due to development of a newly designed internally impedance matched circuit and a FET chip optimized for the 3.6GHz frequency band.

The new model's EVM is as low as 2 percent. The device will also reduce its power consumption to 1/3 compared to previous models due to low quiescent current (1.5A), added the company.

The device also enables reduced power consumption, reduced installation and operating costs of base transceiver station, said Mitsubishi Electric. Due to its low power consumption, the mechanical size of the transceiver power amplifiers can be reduced in WiMAX base transceiver stations by reducing the size of the power supply circuit and components as well as simplifying the heat-sink design. This leads to low installation and operating costs of base transceiver stations.

The device has a frequency range of 3.5-3.8GHz and operates at d5=12V, Idq6=1.5A, Rg7=5. Other specifications of the MGFC47B3436B include an output power of 50W, linear power gain of 10dB and 64QAM-3/4, channel bandwidth of 6MHz.

Sample shipment of MGFC47B3538B will begin in December.




Article Comments - GaAs FET amp targets European WiMAX ...
Comments:??
*? You can enter [0] more charecters.
*Verify code:
?
?
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

?
?
Back to Top