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Low on-resistance for this power MOSFET

Posted: 22 Jan 2008 ?? ?Print Version ?Bookmark and Share

Keywords:NEC? power? MOSFET?

The latest addition to NEC Electronics America Inc.'s NP Series is the NP180N04TUG low-voltage power MOSFET, which features an advanced architecture and package designed to manage heat dissipation and reduce power loss with a low RDS(on) level of 1.5m? (maximum).

Operating at 40V voltage drain source (Vds) and 180A, the NP180N04TUG is well-suited for applications such as automotive systems, low-voltage DC motor controllers and uninterruptible power supplies that require high current capability, stringent power management and high reliability.

The NP180N04TUG power MOSFET is manufactured with NEC Electronics' UMOS-4 trench process technology, which achieves an ultra-fine design rule of 0.25 microns and results in higher cell density, up to 160 million cells per square inch that enables lower RDS(on) over a given area of silicon. The device also features NEC Electronics' advanced TO-263-7 package, which uses a unique multi-bonding technology that doubles the number of bonding wires from two to four. Additional bond wires lower RDS(on) while improving the MOSFET's current-carrying capabilities up to 180A.

NEC Electronics' NP180N04TUG power MOSFET is rated for both single and repetitive avalanche energy and for operation up to 175C at a gate voltage of 10V and a drain voltage of 40V. Price starts at $2.50 each in low volumes. The devices are available now.

- Ismini Scouras
eeProductCenter




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