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pMOSFET claims industry's thinnest profile at 0.59mm

Posted: 11 Apr 2008 ?? ?Print Version ?Bookmark and Share

Keywords:p-channel power MOSFET? thin profile MOSFET?

Si8441DB

To address the need for smaller components in portable devices, Vishay Intertechnology Inc. has released a new 20V p-channel TrenchFET power MOSFET in a MICRO FOOT chip-scale package with the industry's lowest profile and on-resistance for this device type.

The Vishay Siliconix Si8441DB offers an ultracompact 0.59mm profile and a footprint area of 1.5mm x 1mm. It is also the first device of its kind of offer an on-resistance rating at 1.2V. Typical applications for the device will include load switching and battery protection in portable devices such as cellphones, PDAs, digital cameras, MP3 players and smart phones.

The Si8441DB offers a low on-resistance range from 0.600 at 1.2V VGS to 0.080 at 4.5V VGS, with a maximum gate-source voltage of 5V. The low on-resistance rating at 1.2V reduces the need for level shift circuitry, thus saving space in portable electronics designs.

Also released today, in the same MICRO FOOT package, was the 20V p-channel Si8451DB. Rated for a maximum gate-to-source voltage of 8V, on-resistance for the Si8451DB ranges from 0.200 at 1.5V to 0.080 at 4.5V, the best such values ever achieved for a device with these voltage ratings.

As portable electronics become more compact, and their functionality increases, the available board space for power management circuitry decreases significantly. To meet consumer expectations for battery runtimes between charges, designers require smaller MOSFET packages with low power consumptionwhich is exactly what the Si8441DB and Si8451DB provide.

Samples and production quantities of these new MICRO FOOT chip-scale power MOSFETs are available now, with lead times of 10 to 12 weeks for larger orders.





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