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Freescale debuts 50V LDMOS power transistors for L-Band

Posted: 05 Jun 2008 ?? ?Print Version ?Bookmark and Share

Keywords:LDMOS RF power transistor? high-power RF? LDMOS technology?

Freescale Semiconductor has unveiled the world's first 50V LDMOS RF power transistor for L-Band radar applications. The line-up is suited for a wide range of high-power RF applications including air traffic management and long-range weather radar.

The RF product line includes the MRF6V14300H final stage device and the MRF6V10010N driver. The MRF6V14300H produces pulsed RF output power of 330W at frequencies between 1,200 and 1,400MHz and sets new standards for efficiency, gain and thermal resistance at this power level and frequency when compared to competing bipolar and FET devices.

"With our new RF portfolio announcement, we now demonstrate the capability of 50V LDMOS for avionics and radar applications at the L-Band frequency of 1.2-1.4GHz," said Gavin Woods, VP and general manager of Freescale's RF division. "Not only have we leveraged the exceptional capabilities of Freescale's LDMOS technology, we also have set new RF performance standards in several key figures of merit."

Features
The advanced line of RF power transistorsthe first in Freescale's 50V RF power LDMOS avionics and radar portfolioprovides competitive advantages, such as a standard voltage supply, low cooling costs and high reliability of pallet design for Freescale customers designing pulsed RF power opportunities in L-Band frequencies. Future additions to Freescale's radar and avionics portfolio, planned for announcement in 2H of this year, are expected to demonstrate gain, efficiency and thermal resistance characteristics that are designed to outperform other similar products in the market today.

The thermal resistance of the Freescale MRF6V14300H device, packaged in a RoHS compliant, air-cavity ceramic package, is less than 0.12C/W JC, which is engineered to effectively manage heat dissipation and reduce heat sink size. The excellent thermal performance provides cooler junction temperature. The MRF6V10010N is in an over-molded plastic package, also offering significant thermal performance. When combined in a line-up, the result is low cooling costs and high reliability of a pallet design.

Key RF performance figures for the MRF6V14300H include 1,200 to 1,400 MHz frequency range, 330W peak output power (at 1,400MHz, 12 percent duty cycle), 17dB gain, and 60 percent drain efficiency. In particular, the 60 percent drain efficiency is engineered to a minimum 10 percentage points higher than competing devices. The MRF6V10010N delivers 8W peak output power (at 1,400MHz, 300?s, 12 percent duty cycle), 22dB gain, and 60 percent drain efficiency.

The MRF6V10010N is sampling now and in production. The MRF6V14300H is sampling, and full production is expected in Q3 08. A broadband reference text fixture for the MRF6V14300H is available. Large-signal models are expected to be available for both devices in late 2008.





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