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'First' 4Gbit DDR3 developed

Posted: 02 Feb 2009 ?? ?Print Version ?Bookmark and Share

Keywords:chip DRAM? DDR 4Gbit? manufacturing 50nm?

Samsung Electronics Co. Ltd announced that it has developed a 4Gbit DDR3 DRAM chip using a 50nm manufacturing process. The memory operates at 1.35V and has a maximum data transmission speed of 1.6Gbit/s, according to the company.

"We have leveraged our strength in innovation to develop the first 4Gbit DDR3 in leading the industry to higher DRAM densities," said Kevin Lee, VP for technical marketing at Samsung Semiconductor Inc., in a statement.

The 4Gbit DDR3 can be produced in 16Gbyte registered DIMMs (RDIMMs) for servers and 8Gbyte unbuffered DIMMs (UDIMMs) for workstations and desktop PCs, and 8Gbyte small outline DIMMs (SODIMMs) for laptops.

By applying dual-die package technology, the memory component can deliver modules of up to 32Gbytes memory capacity, Samsung said.

The company did not say when the chip would be available as a sample, in volume production or at what price it would be sold.

- Peter Clarke
EE Times Europe





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