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MOSFETs handle high-current power switching apps

Posted: 01 Mar 2010 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? switching application? DC/DC?

IXYS Corp. has expanded its GigaMOS product family with new GigaMOS TrenchT2 Standard and HiPerFET Power MOSFETs that are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc at 25C).

The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these new devices promote device consolidation through the reduction or elimination of multiple paralleled lower current-rated MOSFET devices in high-power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability and cost.

These new GigaMOS Power MOSFETs incorporate IXYS' TrenchT2 technology allowing for improved channel density while achieving lower on-state resistances and gate charge to facilitate energy-efficient switching at high speeds. Power switching capabilities of HiPerFET versions are further enhanced via IXYS' proven HiPerFET process, yielding a fast intrinsic rectifier which provides low reverse recovery charge (Qrr) and excellent commutating dV/dt ratings. Additional features include a 175C operating temperature and avalanche capabilities. These combined product attributes coupled with high current ratings make for a suitable device for high-current power switching applications.

IXYS' GigaMOS TrenchT2 Power MOSFETs are available in three industry standard packages TO-264, PLUS247 (hole-less TO-247 variant) and miniBLOC SOT-227. Some part number examples are: IXTK600N04T2 (40V, 600A, Rds(on) no greater than 1.5m?, TO264), IXTN550N055T2 (55V, 550A, Rds(on) no greater than 1.3m?s, SOT227) IXFN520N075T2 (75V, 455A, Rds(on) no greater than 1.65m?, SOT227), IXFX360N15T2 (150V, 360A, Rds(on) no greater than 4m?, PLUS247), IXFN320N17T2 (170V, 260A, Rds(on) no greater than 5.2m?, SOT-227) and IXFX320N17T2 (170V, 320A, Rds(on) no greater than 5.2m?, PLUS247). These power MOSFETs are tailored to provide superior switching performance in a broad range high-power switching applications. Suitable applications include synchronous rectification, DC/DC converters, battery chargers, switch-mode/resonant mode power supplies, DC choppers, AC motor drives and uninterruptible power supplies.





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