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RFMD pushing GaN-based, ZigBee products

Posted: 05 Nov 2010 ?? ?Print Version ?Bookmark and Share

Keywords:GaN? power transistor? Zigbee?

RF Micro Devices Inc. (RFMD) announced that it will showcase its remarkable high-performance RF components at electronica 2010, in Munich from November 9 to November 12.

RFMD's products on exhibit at electronica 2010 shall consist of GaN-based products, such as the RF3932 C a DC to 3GHz 78-Watt power transistor for high-power applications, and its recently announced RFPD2650 hybrid power doubler amplifier for CATV infrastructure applications. RFMD shall also showcase its newly released RFSA2614 and RFSA2624 digital step attenuators, which accommodate 3G/4G/LTE and WiMax markets, and the RF6535 C a single-chip ZigBee front end module (FEM) that is optimized specifically for smart energy and advanced metering infrastructure (AMI) applications as well as smart meters.

RFMD says its RF components deliver to over 20 end-market segments, including point-to-point (P2P) microwave radio, high performance Wi-Fi, WiMax, smart energy, wireless infrastructure, military and space, broadband transmission, and wireless consumer products.

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