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Samsung proposes gate-last technology

Posted: 07 Dec 2010 ?? ?Print Version ?Bookmark and Share

Keywords:processors? high-k/metal-gate? foundry? low-power?

Samsung has been planning the roll out of its gate-first, high-k technology this year. As previously reported, the technology will be offered at the 32nm and 28nm nodes for foundry customers. So it is confusing some industry members that the company is presenting a paper on "gate-last high-k/metal gate devices" at the 2010 IEEE International Electron Devices Meeting.

"Gate last high-k/metal gate compatible source/drain (S/D) stress-memorization-technology (SMT) is presented. Channel stress is simulated by using mask-edge dislocation model and actual stress is also measured by Raman spectroscopy. Extremely deep pre-amorphization-implant for SMT enhances short-channel electron mobility by 40-60 percent. More than 10 percent short channel drive current gain is achieved," according to a preview of Samsung's paper.

Samsung recently sent the message to the foundry industry that it is ready for a big push in 32-nm production with high-k. In June, the company said its foundry business qualified a 32-nm low-power process with a high-k/metal-gate technology. The company lays claim to being the first foundry to "qualify" a high-k/metal-gate technology. This is based on a gate-first technology.

Some believe the company is exploring a move to bring gate-last in production after 28-nm.

If so, this would be a major departure from Samsung's original position. The gate-first technology was developed and is now being touted by IBM Corp.'s "fab club." IBM, Infineon, GlobalFoundries, NEC, Samsung, ST, Toshiba and others are part of IBM's technology alliance.

The camp is far behind Intel Corp., which has shipped 45- and 32-nm processors based on its gate-last, high-k technology.

- Mark LaPedus
EE Times

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