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RF/Microwave??

Power MOSFETs claim lowest on-resistance rating

Posted: 05 Apr 2011 ?? ?Print Version ?Bookmark and Share

Keywords:on-resistance? power MOSFET? SiR662DP? SiR640DP?

Vishay Intertechnology has introduced 40V and 60V N-channel TrenchFET power MOSFETs with what the company touts is the industry's lowest on-resistance and on-resistance times gate charge figures of merit (FOM) for devices with these voltage ratings in the SO-8 or PowerPAK SO-8 packages.

The 60V SiR662DP offers on-resistance of 2.7 milliohms at 10V and 3.5 milliohms at 4.5V and an FOM of 172.8 milliohms-nC at 10V and 105 milliohms-nC at 4.5V. The device's on-resistance values at 10V and 4.5V are 3.5 percent lower and 27 percent lower than those of the closest competing MOSFET, respectively, while its FOM is 23 percent lower at 10V and 57 percent lower at 4.5V. These low values are expected to reduce switching losses across the whole operating range of the device.

The 40V SiR640DP offers on-resistance of 1.7 milliohms at 10V and 2.2 milliohms at 4.5V and an FOM of 128 milliohms-nC at 10V and 76 milliohms-nC at 4.5V. The device's on-resistance value at 4.5V is 4 percent lower than the next-best competing MOSFET while its FOM is 15.5 percent lower at 4.5 V.

Both devices are built on a new silicon technology utilizing an optimized trench density and a unique gate structure. Their low FOMs reduce switching losses in high-frequency and switching applications, particularly at light loads and standby mode.

The SiR662DP and SiR640DP are intended for secondary-side synchronous rectification in DC/DC and AC/DC converters, primary-side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications. Typical end products will include telecom power supplies, industrial automation and professional gaming systems, uninterruptible power supplies (UPS), and consumer applications.

The MOSFETs' 4.5 V rating will provide designers the opportunity to use a 5 V power rail in their systems, already present for powering digital logic, without having to create and find space for a 10 V power rail. The 4.5 V rating will also significantly lower gate drive losses while allowing the user of lower-voltage, lower-cost 5 V PWM ICs.

Both devices are 100 percent Rg- and UIS-tested. They are halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.

Samples and production quantities of the SiR662DP and SiR640DP are available now, with lead times of 16 weeks for large orders.





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