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Power MOSFET supports low power applications

Posted: 17 Jun 2011 ?? ?Print Version ?Bookmark and Share

Keywords:HEXFET? MOSFET? PQFN?

International Rectifier (IR) has unveiled the extension of its packaging portfolio with the introduction of a PQFN2x2mm package featuring IR's latest HEXFET MOSFET silicon that promises an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smartphones, tablet PCs, camcorders, digital still cameras, and notebook PC, server and network communications equipment.

Featuring a footprint of just 4mm2, the new PQFN2x2 devices, which are available in 20V, 25V and 30V with standard or logic level gate drive, utilize IR's latest low voltage N-channel and P-channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density in line with a PQFN3.3x3.3 or PQFN5x6 package.

The PQFN2x2 family includes P-channel devices optimized for use in the high-side of load switches, providing a simpler drive solution. Featuring a low profile of less than 1mm, the devices are compatible with existing Surface Mount Techniques, feature industry-standard footprint and are RoHS compliant.

Production orders are available immediately.





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