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Next generation of NXP low VCEsat transistors

Posted: 13 Jul 2011 ?? ?Print Version ?Bookmark and Share

Keywords:transistors? MOSFETs?

Here's a document that contains detailed information about the NXP Semiconductors' generation of low VCEsat transistors. This devices are touted to open a new field of applications for bipolar transistors with higher power requirements and improved energy efficiency.

In the last years switching applications for higher power ratings are realized with MOSFETs as switching elements in most cases because the low drain-source on-state resistance RDSon values together with fast switching times guarantee low losses. Furthermore MOSFETs do not require a static control current.

View the PDF document for more information.





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