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Infineon launches P-channel 40V auto power MOSFETs

Posted: 08 Sep 2011 ?? ?Print Version ?Bookmark and Share

Keywords:P-channel? MOSFETs? power management?

Using advanced trench technology, Infineon Technologies AG has produced a family of OptiMOS P2 products, aiming for strengthened market position in the next-generation automotive applications industry.

According to Infineon, the new product family offers the lowest RDS(on) P-channel 40V MOSFET in the automotive industry and provides currents from 50A to 180A in various standard packages, for more than 30 derivatives. 180A is a benchmark in P-channel technology. Applied as High-Side switches in automotive bridge applications, the P-channel 40V OptiMOS P2 products do not require additional charge pump devices, providing significant cost savings and improved EMI performance. In combination with pulse width modulation (PWM) control, the new devices offer a better thermal behavior and a better avalanche performance than N-channel MOSFETs. This makes them ideal for reverse battery protection and motor control applications in cars such as electric power steering (EPS) motor controls, 3-phase and H-bridge motors i.e. windshield wipers, electric parking brake, HVAC fan controls, and electric pumps i.e. for water, oil and fuel.

OptiMOS P2

The new product family offers the lowest RDS(on) P-channel 40V MOSFET in the automotive industry and provides currents from 50A to 180A in various standard packages.

Cost and efficiency advantages are creating a clear industry trend toward trench-type MOSFET concepts. Based on the second generation of Infineon's trench technology, the OptiMOS P2 devices provide low gate charge, low capacitance, low switching losses, high currents and excellent figure of merit (FoM) specifications (RDS(on) Qg) to deliver high efficiency in electrical motors while minimizing EMC emissions. For example, an industry-wide lowest RDS(on) of only 2.4m (at 10V in D�PAK packages) is one third less compared to alternative MOSFETs on the market.

With the new P-channel 40V devices Infineon expands its product portfolio for motor controls with bridge configurations, which are widely used in automotive systems. Bridge configurations require MOSFETs both for the high-side and low-side. Compared to N-channel MOSFETs the new P-channel devices do not need an additional charge pump to implement high-side switches that drive DC brush motors or brushless 3-phase DC motors. This leads to cost savings as P-channels can also be driven by a simple drive circuit. In case of a H-bridge motor, savings may range on average between approximately 5 percent and 10 percent.

The OptiMOS P2 devices with robust packages are designed to sustain temperatures of up to 260C during reflow soldering at moisture sensitivity level 1 (MSL1) and have lead-free plating for RoHS compliance. The power MOSFETs are fully qualified according to the specifications of Automotive Electronics Council (AEC-Q101).

Devices with 34 derivatives and current capabilities from 50A to 180A are currently in production. Samples are available in all standard power packages including TO-220, DPAK, D2PAK and TO-262, as well as in a 7-lead D2PAK.





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