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Memory/Storage??

Server system touts low power DRAM

Posted: 27 Sep 2011 ?? ?Print Version ?Bookmark and Share

Keywords:server system? data center? power consumption? DRAM?

Samsung Electronics Co. Ltd and the Microsoft Technology Center in Munich have unveiled a server system built from Samsung's 30nm-class DDR3 Green Memory and Microsoft's virtualized data center. According to them, the solution has resulted in notable power savings.

"The world notices a dramatic increase of energy usage in data centers with more and more people leveraging their IT and moving to a private cloud. With the innovative memory modules from Samsung, we do not only measure higher throughput and performance for our hyper-v cloud solutions but a lower power consumption of the involved server systems, too. This is a great win-win situation for everyone," said Frank Koch, infrastructure architect and Green IT lead of Microsoft Germany.

"Our collaborative efforts with Microsoft are focused on expanding solutions with greater energy efficiency and IT investment savings for next-generation and current server systems, thus enabling more sustainable business practices such as 'creating shared value' for customers on a grander scale," said Wanhoon Hong, executive VP of memory sales and marketing, Samsung.

Samsung said its 30nm-class 2Gb DDR3 chips feature the highest DRAM performance level, based on innovative circuit design and advanced processes. For server applications, memory modules can reach up to 1.866Gbit/s at 1.35V, while PC modules can run at up to 2.133Gbit/s at 1.5V, which is 3.5 times faster than 60nm-class DDR2 and 1.6 times faster than 50nm-class DDR3, claimed the company.

Samsung's Green Memory was tested in eight gigabyte registered dual inline memory modules, on systems running virtualized environments with the Windows Server 2008 R2 Enterprise OS. They delivered power conservation levels of up to 15 percent for a 30W per system decrease, compared to systems using 50nm-class DDR3, said the company.

Microsoft and Samsung plan to expand their collaborative evaluation efforts that optimize 20nm-class and 30nm-class DDR3 memory and enterprise SSDs through system-level tests in virtual environments. The collaboration will include next-generation DRAM and data storage devices that contribute significantly to an IT department's total cost of ownership.





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