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Non-punch-through IGBTs cut losses 20%

Posted: 21 May 2012 ?? ?Print Version ?Bookmark and Share

Keywords:non-punch-through? IGBTs?

welding applications, solar inverters, and uninterruptible and switch mode power supplies

Microsemi Corp. has debuted the first devices in its new series of 1,200V non-punch-through (NPT) IGBTs that the company claims reduces total switching and conduction losses by up to 20 percent.

The IGBTs leverage the company?s Power MOS 8 technology, and target applications such as welding, solar inverters, and uninterruptible and switch mode power supplies.

The first products of the series to be released are the APT40GR120B, APT40GR120S and APT40GR120B2D30. The devices are offered on a standalone basis or can be packaged in combination with one of Microsemi?s FRED or silicon carbide Schottky diodes to simplify product development and manufacturing.

Other features of the IGBTs include lower gate charge for faster switching; hard switching operation greater than 80KHz to enable more efficient power conversion; easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high power applications; and Short Circuit Withstand Time Rated (SCWT) for reliable operation in applications requiring short circuit capability.

The APT40GR120B transistor is offered in a TO-247 package and the APT40GR120S is packaged in surface mount D3 PAK. The APT40GR120B2D30 is a T-MAX packaged device that includes a 30A anti-parallel, ultrafast recovery diode built with Microsemi?s proprietary ?DQ? generation of low switching loss, avalanche energy rated diode technology.

The first two of Microsemi?s new NPT IGBTs are fully characterized and in production. Samples are available now.





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