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NXP TrenchMOS surpasses AEC-Q101 requirements

Posted: 25 May 2012 ?? ?Print Version ?Bookmark and Share

Keywords:trenchMOS? MOSFET? automotive applications?

NXP Semiconductors NV has unveils a family of automotive power MOSFETs based on NXP's Trench 6 technology that are fully AEC-Q101 qualified.

The MOSFETs have completed extended lifetime testing at 175�C for more than 1,600 hours and claim very low PPM levels.

The first products in the MOSFET family will be available in D2PAK, at voltage grades of 30V, 40V, 60V, 80V and 100V. Future Trench 6 releases will be made in all other automotive packages to cover virtually all automotive applications, from simple lamp-driving to the sophisticated needs of power control in powertrain, body and chassis systems.

Trench 6 enhances switching performance compared to previous generations of TrenchMOS, enabling very low QGD for a given RDSon, which is suited for DC-DC switching applications in the car. NXP automotive power MOSFETs also offer true logic level variants for every product, combining benchmark on-resistance performance with threshold voltage tolerance, to ensure that the MOSFET can be fully controlled at high temperatures.





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