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Employing 2.3-2.7GHz LNA with BFU730F

Posted: 20 Jun 2013 ?? ?Print Version ?Bookmark and Share

Keywords:BFU730F? discrete HBT? BiCmos process? SiGe:C?

The BFU730F is a discrete HBT that is produced using NXP Semiconductors' 110GHz fT SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved.

View the PDF document for more information.

Originally published by NXP Semiconductors at www.nxp.com as "Single stage 2.3_2.7GHz LNA with BFU730F".





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