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Epitaxy process integrates GeSn MOSFET device on Si

Posted: 19 Sep 2013 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? epitaxy? germanium tin? GeSn? CMOS?

KULeuven, Imec and AIST have come up with a solid phase epitaxy process to integrate germanium tin (GeSn) metal-oxide semiconductor field-effect transistor (MOSFET) devices on silicon. According to the companies, the operation of depletion-mode junctionless GeSn pMOSFET on silicon serves as an important step towards reaching tensile strain in MOSFET devices and increasing their mobility.

To improve performance in next-generation scaled complementary metal-oxide semiconductor (CMOS) devices, researchers are exploring the integration of novel materials with superior electron mobility. This includes GeSn, a promising semiconductor candidate as channel material, due to its superior physical properties. GeSn enables increased switching speed of MOSFET devices and can be used in fast optical communication. While most prototype GeSn channel MOSFETs are fabricated on Ge substrates, silicon integration is preferred for CMOS compatibility.

However, epitaxial growth of GeSn on silicon substrates poses several challenges, including limited solubility of Sn in Ge (0.5 per cent), its compositional fluctuations, Sn segregation, and large lattice mismatch (>4 per cent). Therefore, it is critical to suppress these effects to obtain high performance devices with GeSn layers.

Researchers from KULeuven, Imec and AIST developed a solid phase epitaxy process, achieving ultrathin (>10?m) single-crystalline GeSn layers on silicon substrates showing tensile strain, attractive for strain engineering of Ge channels. Furthermore, it reduces the difference between the direct and indirect band transition, resulting in acquisition of a direct band gap group IV material. Lastly, due to its non-equilibrium deposition conditions, the method enables the development of GeSn with high Sn concentrations .

By decreasing the channel thickness with reactive ion etching (RIE) from ~30nm to ~10nm, the researchers improved the on/off ratio by more than one order of magnitude. Additionally, hole depletion in the ultrathin (~10nm) GeSn layers on silicon resulted in good transfer characteristics with an on/off ratio of 84. In the future, research will focus on optimising the GeSn MOSFET on silicon devices to further increase the channel mobility.





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