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Microsemi's VDMOS MOSFET ready for ISM applications

Posted: 24 Oct 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Microsemi? VDMOS? MOSFET?

Richardson RFPD recently announced the availability of Microsemi's two new high-frequency vertical diffusion metal oxide semiconductors (VDMOS) MOSFETs.

The new high-power, high breakdown voltage (V(BR)DSS), common source configuration devices offer excellent stability and low intermodulation distortion (IMD). Constructed with nitride passivated chips, gold metallisation and gold wire bonds for high reliability, they are available in thermally-enhanced packages. The new MOSFETs are designed for Industrial, Scientific and Medical (ISM) applications and other broadband commercial and military applications requiring high power and gain without compromised reliability, ruggedness, or inter-modulation distortion.

Key features of the 50V, 400W, 150MHz VRF2944 include:

  • Improved ruggedness V(BR)DSS = 170V
  • 400W with 22dB typical gain @ 30MHz, 50V
  • 3:1 Load VSWR capability at specified operating conditions
  • Can operate up to 65V
  • Key features of the 100V, 300W, 150MHz VRF3933 include:

  • Improved ruggedness V(BR)DSS = 250V
  • 300W with 22dB typical gain @ 30MHz, 100V
  • 3:1 Load VSWR capability at specified operating conditions




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