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What is NAND flash?
Flash memory chips are constructed of either NOR or NAND gates. Developed by Toshiba, NAND flash works like a disk rather than memory. It has faster erase and write times, higher density, and lower cost per bit than NOR flash, and ten times the endurance. However, its I/O interface allows only sequential access to data, which makes it suitable for mass-storage devices and somewhat less useful for computer memory.
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2015-06-23 What's inside 1Xnm planar NAND?
Double patterning has become mandatory for making the 16nm node NAND flash and the memory makers use a self-aligned double patterning for the active, control gate, floating gate and bitline patterning.
2009-06-09 Wear-leveling techniques in NAND flash devices
Wear leveling is a process that helps reduce premature wear in NAND flash devices. This application note highlights the importance of wear leveling, explains two primary wear-leveling techniquesstatic and dynamicand calls attention to other considerations involved in implementing wear leveling.
2004-11-29 Wear leveling in single level cell NAND flash memories
This app note describes the wear leveling algorithm that STMicro recommends to implement in the flash translation layer (FTL) software for NAND flash memories.
2012-04-24 Weak demand pulls NAND flash contract price
Demand momentum for the memory device was weak since the start of the slow season, with contact price falling by 4-8 percent, noted DRAMeXchange.
2001-04-23 Using NAND tree test circuits for input parametric testing
This application note discusses how to implement a simple NAND tree test structure for input parametric testing of ASIC designs.
2005-07-01 Using multilevel cell NAND flash technology in consumer applications
Multilevel cell NAND flash memories surpass data-storage performance requirements in today's digital consumer applications
2008-05-07 Using Micron MT29F2G08AACWP NAND flash memory in Toshiba TC58NVG1S3BTG00 apps
This technical note compares the third-generation 2Gbit Micron NAND flash device with 2Gbit Toshiba device TC58NVG1S3BTG00.
2009-03-02 Using Copyback operations to maintain data integrity in NAND flash devices
Copyback operations, which are sometimes referred to as Internal Data Move operations, play a key role in maintaining data integrity in the NAND flash device.
2007-05-09 UMC gears up for CPUs, NAND flash memory
United Microelectronics Corp. said it is in talks on a CPU production deal, but it is being circumspect on how it will attack the high-volume flash memory market.
2012-04-24 Ultrabooks to benefit global NAND flash market
According to IHS, NAND flash memory market is expected to achieve eight percent growth this year because of major sales drivers such as solid-state-drive equipped ultrabooks.
2009-05-08 Trio to co-develop NAND controllers
Hynix Semiconductor Inc, Numonyx B.V. and Phison Electronics Corp. have signed a collaboration agreement to jointly develop controllers for the next generation of managed-NAND solutions based on the newly released JEDEC eMMC 4.4 industry specification.
2011-04-26 Toshiba-SanDisk overtake Intel-Micron in NAND process race
Outpacing the Intel-Micron duo, Toshiba and SanDisk have fabricated 2bit-per-cell, 64Gb NAND flash memory chips with 19nm process technology, thus enabling 8GB on a single chip.
2009-02-02 Toshiba, SanDisk update NAND fab JV
SanDisk Corp. and Toshiba Corp. announced they have restructured their fab venture.
2003-12-05 Toshiba, SanDisk to expand NAND flash memory production
Toshiba Corp. and SanDisk Corp. have agreed to cooperate in the construction of a new 300mm wafer fab facility at Toshiba's Yokkaichi operations.
2007-03-01 Toshiba, SanDisk ship 'highest-density' NAND
Toshiba co-developed with SanDisk a 16Gbit NAND flash memory fabricated in 56nm process technology, said to be the highest-density single-chip NAND flash memory yet achieved.
2004-04-16 Toshiba, SanDisk expand 300mm NAND fab plan
Toshiba Corp. said it expects the final capacity of its planned 300mm NAND memory fab to be about 37,500 wafers a month, 1.5 times larger than the original plan announced in last December.
2003-06-13 Toshiba, SanDisk co-develop NAND cell architecture
Toshiba and SanDisk have announced the development of a high density NAND flash memory cell structure that allows fabrication of 4Gb NAND flash devices.
2012-07-26 Toshiba's NAND flash cuts increases market morale
Toshiba's temporary capacity reduction will benefit the oversupply situation in the third quarter as well as rally NAND flash industry confidence needed to help stabilize market price.
2006-03-28 Toshiba wins NAND suit versus Hynix, says report
Hynix Semiconductor was ordered by a Japanese court on March 24 to stop selling NAND flash memory components in Japan in relation to a lawsuit brought by Toshiba.
2008-02-21 Toshiba ups fab capacity, inks NAND deal with SanDisk
Targeting to boost its fab capacity, Toshiba is constructing additional plants in Yokkaichi, Mie Prefecture, and in Kitakami, Iwate Prefecture, Japan. The company likewise signed a NAND deal with SanDisk.
2016-01-25 Toshiba to sell chip business except NAND
The company will consolidate its investment and business operations on flash memory and nuclear energy businesses, and has now positioned them as the two pillars to carry the company's future.
2013-05-22 Toshiba to produce next-gen NAND flash tech
The company developed a second generation 19nm process technology that it will apply to mass production of 2bit/cell 64Gb NAND memory chips later this month.
2008-12-18 Toshiba to cut NAND production by 30%
Toshiba Corp. will cut its NAND flash memory production at its Yokkaichi Operations plant in Mie Prefecture, Japan by approximately 30 percent, effective January 2009.
2005-08-02 Toshiba to boost NAND production
Anticipating soaring demand for NAND flash memory, Toshiba Corp. will boost investment in its memory fab in Yokkaichi, increasing capacity to 30,000 300mm wafers a month, or 40 percent more than previously planned.
2011-04-11 Toshiba takes 24nm route for NAND flash
SmartNAND integrates NAND flash memory with a control IC that can perform error checking and correction, thereby removing the burden of ECC from the host processor and enhancing speed performance.
2008-06-18 Toshiba shuts down 200mm NAND JV
Toshiba is slightly scaling back on its 200mm NAND flash-memory production amid a downturn in the arena. It will mainly focus on its 300mm fabs to meet improved production efficiency for the company's overall semiconductor business.
2010-03-25 Toshiba sets up NAND flash fab in Japan
Toshiba Corp. it set to start construction of new a fabrication facility on a site next to Yokkaichi Operations, its memory production facility in Mie Prefecture, in July.
2003-03-17 Toshiba samples 2Gb NAND Flash memory
Toshiba Corp. is sampling a 2Gb, single-die NAND Flash memory for use in digital consumer products such as digital-still cameras and PDAs.
2004-04-13 Toshiba rolls out first 4Gb single-die MLC NAND flash unit
Toshiba has disclosed that it has introduced the semiconductor industry's first 4Gb single-die, multi-level cell, NAND flash memory.
2009-12-23 Toshiba reigns over Q3 NAND flash market
Global NAND flash memory revenue in Q3 09 rose to $3.94 billion, up 25.5 percent from $3.1 billion in Q2 09, according to iSuppli.
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