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2002-02-13 UMC dropping Dow's SiLK from performance 130nm process
After working with Dow Chemical's low-k dielectric film for nearly a year, UMC is preparing to drop Dow's SiLK from its high-performance 130nm process, choosing a path different than that of development partner IBM Corp
2004-11-17 TSMC's 65nm process set to arrive late 2005, cost $1 billion
By the time Taiwan Semiconductor Mfg Co. Ltd (TSMC) ramps its first 65nm manufacturing process technology into volume production, late in 2005, it will have cost about $1 billion to develop, according to company chairman Morris Chang
2002-09-30 TSMC supports Barcelona in 90nm node-based products
Barcelona Design Inc. intends to develop products at the 90nm technology node
2008-06-05 TSMC stirs IC designs using 40nm node
Paving the way for next-generation chips, TSMC is set to roll out its latest design methodology for IC production at the 40nm node
2012-04-20 TSMC shifts from multiple to single-only process at 20nm
Shang-yi Chiang, EVP at TSMC, said the firm might also offer an 18nm or 16nm process node after 20nm if lithography technology is not available to make 14-nm devices cost effectively.
2007-07-16 TSMC pulls curtains off 45nm design process
Taiwan Semiconductor Manufacturing Co. Ltd unveiled its latest and most ambitious design methodology for IC production at the challenging 45nm node
2002-04-15 TSMC exec advocates slower steps between process nodes
Taiwan Semiconductor Mfg. Co. Ltd said it aims to deliver its first ICs based on 90nm design rules by the third quarter of this year, about one year ahead of the time frame cited in the industry's International Technology Roadmap for Semiconductors.
2011-04-26 Toshiba-SanDisk overtake Intel-Micron in NAND process race
Outpacing the Intel-Micron duo, Toshiba and SanDisk have fabricated 2bit-per-cell, 64Gb NAND flash memory chips with 19nm process technology, thus enabling 8GB on a single chip
2008-03-26 TMSC unveils 40nm 'half-node' step to 32nm
TSMC has unveiled an interim, 'half-node' step toward 32nm, which the foundry giant expects to ramp starting late next year
2010-07-09 TI turns to pillar flip-chip for 45-/40nm node
Texas Instruments Inc. is embracing an emerging technology called fine-pitch copper pillar flip-chip packages for devices at the 45-/40nm node and below
2004-01-26 TI builds 1GHz DSP in 90nm process
Setting marks in DSP speed and process geometry, Texas Instruments Inc. (TI) is sampling a 1GHz device built in a 90nm process
2008-05-19 Synopsys, TSMC develop modeling tech for 40nm process
Synopsys has released the TSMC Modeling Interface methodology, an advanced HSPICE modeling methodology for 40nm processes that improves circuit simulation throughput fivefold.
2015-09-23 Synopsys rolls out IP line for TSMC 10nm FinFET process
The company said this milestone allows designers to speed the development of SoCs that incorporate USB 3.1, USB 3.0, USB 2.0, HSIC, PCI Express 3.0, PCI Express 2.0 and MIPI D-PHY interface IP.
2005-02-14 SRAMs readied for 45nm node
Issues like soft errors and gate current leakage are emerging as design challenges as SRAM technology moves below 90nm, according to memory experts at this week's International Solid-State Circuits Conference here.
2014-12-19 SMIC makes Snapdragon 410 processor in 28nm process
This represents an important step for SMIC in their 28nm process maturity as they become one of the first Chinese foundries to produce high-performance, low-power mobile processors
2010-03-04 SanDisk, Toshiba aim to reclaim NAND process lead
The team of SanDisk Corp. and Toshiba Corp. is set to roll out a 24nm NAND flash part in 2H 10 to regain the lead from the Intel-Micron duo.
2004-09-14 Samsung begins making DRAMs on 90nm process
South Korean electronics giant Samsung Electronics Co. Ltd has started mass producing 512Mbit double data rate synchronous DRAMs using a 90nm manufacturing process and 300mm diameter wafers
2005-09-01 Road map rethinks process reductions
The ITRS draft scraps nodes and embraces 'cycles' for more incremental transitions.
2010-01-13 Qualcomm, TSMC unite for 28nm process
Qualcomm Inc. is working closely with foundry partner Taiwan Semiconductor Manufacturing Co. on 28nm process technology
2009-01-13 PCIe 2.0 IP supports 65nm node
Renesas Technology America Inc. has achieved certification of a new logical- and physical-layer intellectual property (IP) conforming to PCIe Base Specification rev 2.0 (PCIe 2.0).
2011-01-21 NetLogic announces silicon tape-out in 28nm process
NetLogic Microsystems Inc. has developed and taped out its next-generation silicon in the advanced 28nm process at Taiwan Semiconductor Manufacturing Co
2008-05-01 Memory compilers, logic libraries support TSMC 40nm process
The availability of memory compilers and logic libraries for TSMC's 40nm process has been announced by Virage Logic
2011-04-19 Intel-Micron duo drives NAND to next node
The Intel-Micron 20nm process yields an 8GB MLC NAND flash device that enables 30-40 percent reduction in board space, thus putting the partnership way ahead of the pack
2012-11-22 Intel's 14nm process delay sends Irish workers home
Intel sent up to 600 Irish staffers home early from production training in the United States after deciding to delay its introduction of the P1272 14nm process
2005-09-21 Intel launches low power 65nm process
Intel Corp. has announced that it is developing an ultra-low power derivative of its high-performance 65nm logic manufacturing process that will benefit mobile platforms and small-form factor devices
2002-08-15 Intel adopts strained silicon for 90nm process
Intel Corp. said that it will add strained silicon technology to its 90nm technology mix, and will use the process to make the Pentium 4 microprocessor code-named "Prescott" starting next year
2013-02-21 Globalfoundries bolsters 55nm CMOS logic process
Globalfoundries enhanced their 55nm LPe 1V, a 55nm Low-Power Enhanced process technology platform, with qualified, next-generation memory and logic IP solutions from ARM
2015-08-05 CoolCube 3D interconnect targets FinFET process
The research institute demonstrated the feasibility of CoolCube used to stack FinFET layers on its 300mm production line as well as with fully-depleted silicon-on-insulator manufacturing processes.
2004-05-31 Chipworks claims UMC-made 90nm part lacks low-k process
A Canadian semiconductor engineering services company claimed that the L90 manufacturing process from Taiwanese foundry United Microelectronics Corp. used in a Spartan-3 FPGA from Xilinx Inc. does not use a low-k interlayer dielectric, contrary to publicity material
2016-03-17 ARM, TSMC to collaborate on 7nm FinFET process tech
The two companies inked a multi-year agreement that will advance process technologies beyond mobile, and build on previous generations of 16nm and 10nm FinFET process technology
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