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ST finds FD-SOI partner in Samsung
Posted:?Jun 29, 2014 3:19 PM

Samsung will work with ST's 28nm FD-SOI design platform, making its foundry services accessible to t...[ View complete article ]


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ST finds FD-SOI partner in Samsung

Posted:? Jun 29, 2014 3:19 PM
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Author:4808957233

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Samsung will work with ST's 28nm FD-SOI design platform, making its foundry services accessible to the broader semiconductor industry. The companies hope their partnership will encourage designers to adopt the process.
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(1) Reply:ST finds FD-SOI partner in Samsung Posted:? Jun 29, 2014 3:19 PM
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Author:4808957233

Level:? Interns

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The 28nm bulk is in mass production for several years by the major semiconductor companies, but 28nm FD-SOI is not manufactured by major semiconductor companiess yet. In my opinion even if 28nm FD-SOI were manufactured today, it wouldn't be superior to 28nm bulk in terms of the transistor performance and manufacturing costs. 28nm FD-SOI with possibly 7nm SOI thickness may provide low power, but not necessarily high performance because of the mobility degradation due to scattering of the charge carriers at the top gate oxide surface and at the bottom SOI surface in 7nm thin SOI channel. Also, the SOI wafers will cost significantly higher than bulk Si wafers. The major issue with the FD-SOI is its scalerbility. The 22nm FD-SOI requires possibly 4-5nm SOI channel thickness, resulting in more mobility degradation, thus adversely affecting the transistor performance. How thin SOI thickness is required for 14nm FD-SOI? 2-3nm? It appears that FD-SOI is not scaleable.
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Reply:ST finds FD-SOI partner in Samsung

Posted:? Jun 29, 2014 3:29 PM
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Author:4808957233

Level:? Interns

Points:? 111

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The 28nm bulk is in mass production for several years by the major semiconductor companies, but 28nm FD-SOI is not manufactured yet. Even if 28nm FD-SOI were manufactured today, it wouldn't be superior to 28nm bulk in terms of the transistor performance and manufacturing costs. 28nm FD-SOI with possibly 7nm SOI thickness may provide low power, but not necessarily high performance because of the mobility degradation due to scattering of the charge carriers at the top gate oxide surface and at the bottom SOI surface in the 7nm thin SOI channel. Also, the SOI wafers will cost significantly higher than the bulk Si wafers. The major issue with FD-SOI is its scalerbility. 22nm FD-SOI requires possibly 4-5nm SOI channel thickness, resulting in more mobility degradation, thus adversely affecting the transistor performance. How thin SOI thickness is required for 14nm FD-SOI? 2-3nm? It appears that FD-SOI is not scaleable.
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