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SAS develops phosphorus-doped ingot process

Posted: 02 Jan 2002 ?? ?Print Version ?Bookmark and Share

Keywords:sino-american silicon products? sas? phosphorus-doped ingot process? ingot? silicon ingot?

Sino-American Silicon Products Inc. (SAS) has developed 4-inch phosphorus-doped ingot process. At present, SAS has sent samples to more than four companies for verification. Upon customer approval, the process will be put in volume production, providing an alternate source for specialized silicon substrates to Taiwan companies.

According to SAS, the company has a complete wafer production line, ranging from ingot growing, lapping, etching and diffusion processes. The latest developed series ingot feature ultra-low resistivity with doped materials including arsenic, antimony and phosphorus.

Generally, the resistivity of arsenic-doped ingot can be controlled below 3 milliohms. However, the phosphorus-doped is more difficult to control with 1.5 milliohms below. The phosphorus-doped wafer is used in power IC applications.

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