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RF Micro starts production in second GaAs HBT facility

Posted: 07 Jan 2002 ?? ?Print Version ?Bookmark and Share

Keywords:rf micro devices? gaas hbt? wafer?

RF Micro Devices Inc. has started production at its second GaAs HBT fabrication facility, located in Greensboro, North Carolina. Currently, the new fab has an annual output of 25,000 to 40,000 wafers. When the second fab is fully equipped and operating at full capacity it is expected to be capable of producing about 210,000 4-inch wafers per year.

David A. Norbury, president and CEO, said, "We expect this new facility will help us to serve and further diversify our customer base as it strengthens our technology leadership and contributes to ongoing reductions in cycle times."

"The new fab has not only contributed to the addition of new customers, it has also been instrumental in the development of recent strategic relationships that represent incremental revenue opportunities for the company," added Jerry Neal, EVP of sales, marketing and strategic development.

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