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IXYS rolls out high-voltage, depletion-mode MOSFETs

Posted: 15 Jan 2002 ?? ?Print Version ?Bookmark and Share

Keywords:ixys? mosfet? fet? ferroelectric transistor? transistor?

The IXTP01N100D and IXTP02N50D high-voltage, depletion-mode MOSFETs are normally on at 0V gate bias and require a negative gate bias to block current. Applications for these MOSFETs include level shifters, current regulators, normally-on solid-state relays, inrush current limiting, offline linear regulators and input transient voltage suppressors.

The IXTP01N100D has a 1kV, 100mA rating, with a drain-source on-resistance of 110 ohms. The IXTD02N50D is rated at 500V, 200mA. It exhibits an on-resistance of 30 ohms. The required gate bias for turn-off is specified at -5V.

The devices are housed in TO-220 packages allowing for high power dissipation of 25W at 250C. Pricing, in 1,000-unit quantities, is at 97 cents for the IXTP01N100D and 86 cents for the IXTP02N50D.

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