Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Memory/Storage

Powerchip to use 0.155m process in 256Mb DDR DRAM

Posted: 17 Jan 2002 ?? ?Print Version ?Bookmark and Share

Keywords:powerchip semiconductor? ddr dram? dram? 0.15�m? sdram?

Powerchip Semiconductor Corp. will use 0.155m CMOS process to make 256Mb DDR DRAMs in its 8-inch wafer fabs starting March this year. With the new process, the company aims to reduce cost and increase added value for each device. According to President Michael Tsai, the same process will also be used to make 128Mb SDRAMs.

The company is also planning to use 0.135m CMOS process to make 256Mb DDR DRAMs at its 12-inch wafer fab this year. "We hope that at the end of second quarter of next year, our production costs from 12-inch wafer fab will be lower than that from the 8-inch wafer fab. Monthly capacity for the 12-inch wafer fab for the first quarter of 2003 will be 9.5 million to 10 million 256Mb devices. This will rise to approximately 3.6 million to 3.7 million units by the end of 2003," said Tsai.

Article Comments - Powerchip to use 0.155m process in 2...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top