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X-FAB adds new mixed-signal technology to its CMOS process platform

Posted: 21 Jan 2002 ?? ?Print Version ?Bookmark and Share

Keywords:x-fab semiconductor? cmos? xc06 high-voltage process? mixed-signal? embedded eeprom?

X-FAB Semiconductor Foundries AG has added a new mixed-signal technology, called XC06 high-voltage process, to its 0.65m mixed-signal CMOS process platform. According to the company, the XC06 high-voltage process is based on a double-poly, double-metal CMOS process and contains an option for embedded EEPROM and will soon contain one for embedded Flash memory.

In the new XC06 high-voltage process, EEPROM memory is offered by default as predefined IP blocks (256x16 und 512x16 bits) but can be adapted to specific customer needs if desired. Currently a third metal layer, as well as a Flash memory option, are available on request. The Flash option is only available in conjunction with the EEPROM module, according to X-FAB.

"This new 0.65m CMOS technology primarily addresses application options in the automotive and communications industries," said Jens Kosch, X-FAB's CTO and Director of Design Support & Technology Development.

The new 0.65m CMOS process is available immediately for product development; X-FAB customers can obtain related design kits and simulation models. Complete qualification for series production of the new technology options is scheduled to be finalized next quarter.





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