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NEC claims 65ns address access time for RAM device

Posted: 30 Jan 2002 ?? ?Print Version ?Bookmark and Share

Keywords:nec? memory chips? memory ic? memory? ram?

By using the company's high-density DRAM process technology and new circuit technology to eliminate dependency on power supply voltage and temperature, the 5PD4664312 is said to offer 65ns address access and 18ns page access time, making it what is claimed to be the fastest 64Mb RAM in the world.

Designed specifically for mobile applications such as cell phones, the memory device utilizes DRAM cells structured to facilitate automatic on-chip refresh, without the need for an off-chip external control device. This allows the device to be interchanged with low-power SRAM devices, offering higher-speed performance, high-density and lower power consumption.

The chip also features an optimized memory cell array and power circuitry that has a standby current dissipation of 605A with a maximum of 1005A. A power-down mode is also available, which does not hang on to data in the memory and has a standby dissipation of 105A.

Offered in a 4Mb-by-16-bit configuration, the 5PD4664312 is packaged in a 93-pin FBGA. The device also offers 8-word page access mode and partial refresh mode, which can reduce the standby current by allowing the user to choose arbitrarily the data hold capacity from either 16Mb, 8Mb or 4Mb.

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