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Toshiba 8Mb SRAM boasts 40ns access time

Posted: 04 Feb 2002 ?? ?Print Version ?Bookmark and Share

Keywords:toshiba america electronic components? taec? toshiba? memory? memory chips?

The company is set to commercialize 8Mb low-power SRAMs designed to maximize the operation of mobile phones. Manufactured using 0.155m CMOS technology, the devices are said to achieve 40ns access timesclaimed to be the world's fastestat voltages ranging from 2.7V to 3.6V. This reduces memory system wait time in wireless applications such as cellular phones.

"The 40ns cycle time is a significant achievement, offering the wireless market the speed it has been demanding, but also catering to the need for very low-power consumption and space-saving packaging options," said Paul Liu, business development manager for SRAM memory at TAEC.

The TC55VBM316ATGN40 comes in a 12-by-20mm 48-pin Type-1 TSOP, while the TC55VBM316ASGN40 is in a 12-by-14mm 48-pin Type-1 TSOP. The TC55VEM316AXGN40 has a 7-by-7mm 48-pin FPBGA package.

The company also offers access times of 55ns to 85ns at 1.65V to 3.6V for designers who require high speeds but are more concerned with low power consumption. In addition, each product in this new family incorporates an internal voltage downconverter and draws 25mA and 30mA during operation, and 5mA and 10mA during standby.

Of the devices with access and cycle times of 55ns, the TC55VBM316ATGN55 comes in a 12-by-20mm 48-pin Type-1 TSOP; TC55VBM316ASGN55, 12-by-14mm 48-pin Type-1 TSOP; and TC55VEM316AXGN55, 7-by-7mm 48-pin FPBGA package.

The 55ns TC55YEM316AXGN55 and 70ns TC55YEM316AXGN70 both operate on 1.8V to 2.2V and are available in 7-by-7mm 48-pin FPBGA packages.

The 8Mb SRAMs are priced at $15 each. All packages are offered with lead-free plating of IC leads.

Toshiba also supplies the SRAM in wafer. The company plans to launch 4Mb and 16Mb low-power consumption SRAMs manufactured with the same advanced process technology next quarter.

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