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STMicro MOSFETs offer 30 percent lower on-resistance

Posted: 08 Feb 2002 ?? ?Print Version ?Bookmark and Share

Keywords:stmicroelectronics? stm? mosfet? mos field effect transistor? power transistor?

STMicroelectronics has introduced three high-voltage n-channel power MOSFETs that feature 30 percent lower on-resistance than previous generation of products. The lower on-resistance values enable power equipment designers to use smaller and less costly heatsinks.

The STL5NK65Z, STP13NK60Z and STP14NK50Z are fabricated using the company's SuperMESH technology and are used in applications such as offline and switch-mode power supplies, adapters, power factor correctors, lamp ballasts, and high-intensity discharge lamps.

Offered in the company's PowerFLAT package, the STL5NK65Z is a 650V device with an on-resistance of 1.6 ohms (typ.) and a source-drain current of 5A.

The STP13NK60Z is a 600V device with a typical on-resistance of 480 milliohms and a drain-source current of 13A. The 500V-STP14NK50Z has a typical on-resistance of 340 milliohms and a drain-source current of 14A. Both are offered D2PAK, I2PAK and TO-220 housings.

The SuperMESH MOSFETs have a reduced Vgs threshold spread from 2V to 1.5V that allow increased driving control.

The MOSFETs also feature built-in, back-to-back Zener diodes between the gate and source terminals to improve resistance to ESD, as well as protect the gate oxide against damage from spurious voltage spikes. The Zener diodes eliminate the need for external protection devices.





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