JMAR receives letter of intent for point source system

FJMAR Technologies Inc.'s JMAR Research Inc. (JRI) division has received a letter of intent from the Department of the Army to execute a formal contract to be funded by the Defense Advanced Research Projects Agency (DARPA) worth $34.5-million. The contract directs JMAR to deliver its patented 1nm point source X-ray lithography (XRL) system to produce high-speed GaAs semiconductors for used in military applications.

In the second quarter of this year, JMAR plans to combine its XRL point source system with an upgraded Model 5 stepper produced by the company's XRL System division, JMAR/JSAL NanoLithography (JSAL). The integrated system will be installed at a government-approved GaAs microcircuit production facility, where it will be used for system demonstrations and semiconductor manufacturing process evaluation purposes.