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Philips SiGe process targets optical network chips

Posted: 19 Apr 2002 ?? ?Print Version ?Bookmark and Share

Keywords:qubic4g? qubic4? tza2060? optical network ic? gigabit ethernet?

Addressing the production of high-speed ICs for optical fiber networking, Philips Electronics has announced the availability of the QUBiC4G semiconductor process that combines high-speed SiGe technology with the passive component integration, substrate isolation, and dense logic capabilities of their QUBiC4 BICMOS process.

The process uses the standard 0.255m CMOS process to integrate high-density logic. The company claims that the QUBiC4G process is capable of producing low-voltage transistors (2.7V) that operate at a maximum frequency of 100GHz, ensuring the gain and phase margins needed to design highly-linear amplifiers and transmission gates.

The process is also capable of producing higher voltage transistor (>3.8V) required to implement VCO circuits or to interface with external 3V logic.

The QUBiC4G transistors also offer 0.68dB NF at 2GHz, while drawing 2405A, making them suitable for battery-powered wireless application in the 5GHz to 10GHz range.

For Gigabit Ethernet and SONET/SDH applications that require gigabit per second data transfers, the transistor's passive components feature the addition of impedance-matched transmission lines in the top two thick metal layers.

QUBiC4's shallow- and deep-trench isolation techniques have also been implemented to the QUBiC4G to minimize cross-talk and interference.

Philips has started using the process with the production of the TZA2060 12.5Gbps asynchronous optical cross-point switch that satisfies the noise figure and current consumption requirement needed by the solution to bring 10Gb Ethernet and SONET/SDH protocols to MANs and WANs.

The single-chip solution is also suited for use in backplane switching, storage area networks, high-speed test equipment, and video switching.





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