Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Memory/Storage

Toshiba Flash memories have 60ns access time

Posted: 18 Apr 2002 ?? ?Print Version ?Bookmark and Share

Keywords:64mb nor flash? 128mb nor flash? nor flash memory? flash? portable device memory?

Toshiba has announced the availability of its 0.165m page-mode 64Mb and 128Mb NOR Flash memories that feature a random access time of 60ns and page access time of 20ns.

Suitable for use in mobile phones, PDAs, and other wireless handheld applications that require high-performance memory, the devices operate from 2.3V to 3.6V, and draws 55mA when reading, 15mA for program/erase functions, and 105A during standby.

The NOR devices offer page-mode access and read-while-write (RWW) dual operation, as well as auto program, chip and block erase, and a lifespan >100,000 cycles.

The 64Mb devices are available in 48-pin TSOP Type I casings and are quoted at $19 each. Available in 56-pin TSOP Type I housings, the 128Mb devices are quoted at $45 each.

Article Comments - Toshiba Flash memories have 60ns acc...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top