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Vishay PowerPAK MOSFETs beat the heat

Posted: 30 Apr 2002 ?? ?Print Version ?Bookmark and Share

Keywords:si7440dp? si7446dp? si7840dp? si7842dp? si7844dp?

Vishay Intertechnology says that seven power MOSFETs in its PowerPAK SO-8 family save board space, improve thermal performance and lower the overall cost for dc/dc converters in desktop PCs, notebooks, laptops, servers, routers and networking systems.

The Si7440DP, Si7446DP and Si7840DP are single n-channel 30V fast-switching MOSFETs for synchronous buck dc/dc converters. The Si7440DP is optimized for low-side synchronous rectifier operation with the lowest on-resistance of the three devices, 6.5 milliohms at a 10V gate drive and a typical gate charge value of 29nC.

The Si7446DP features on-resistance of 7.5 milliohms at a 10V gate drive and a typical gate charge value of 36nC. Optimized for high-side operation, the Si7840DP features comparable specifications of 9.5 milliohms and 35nC.

The dual n-channel 30V Si7842DP and Si7844DP, on the other hand, also are intended for synchronous buck dc-to-dc conversion, where they're said to provide high integration in space-constrained designs.

The Si7842DP integrates a dual n-channel power MOSFET and a Schottky diode in one package, reducing component count and cost in applications with outputs up to 6 amps. For applications with outputs exceeding 6A, the Si7844DP dual MOSFET provides both high-side synchronous and low-side control operation in a single SO-8 package.

The Si7842DP and Si7844DP both feature on-resistance of 22 milliohms at a 10V gate drive and a typical gate charge value of 13nC.

Two other devices, the n-channel 20V Si7448DP and the PWM-optimized 40V Si7848DP, are intended for operation, respectively, as low-voltage and 5V-output secondary synchronous rectifiers in isolated dc/dc converters.

The Si7448DP also is suitable for battery selection and protection in portable computers, the company said. The Si7448-DP and Si7848DP, respectively, feature on-resistance of 9 and 6.5 milliohms at a 10V gate drive, with typical gate-charge values of 18.5nC.

The devices' packages, a thinner-profile version of standard SO-8 MOSFETs, can be used in many applications to replace DPAK power MOSFETs, to halve board space.

The PowerPAK devices' low on-resistance means lower switching and conduction losses and thus higher-efficiency dc/dc circuits. Compared with the standard SO-8 package, these new PowerPAK SO-8 devices are said to deliver at least 21 percent higher maximum continuous-drain current and dissipate at least 61 percent more power. They are also 39 percent lower in height.

Samples and production quantities are available now, with lead times of four to six weeks for larger orders.

Pricing in 100,000-piece quantities ranges from 77 cents to $1.06 each.

EE Times

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