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Mitsubishi RF module widens bandwidth

Posted: 21 May 2002 ?? ?Print Version ?Bookmark and Share

Keywords:ra45h4452m? rf power module? uhf power module? mosfet? rf power design?

Manufactured using the a 0.55m MOSFET process, the RA45H4452M UHF power module from Mitsubishi Electric Corp. integrates a negative feedback circuit and a multistage matching circuit to deliver a bandwidth of 440MHz to 520MHzwider than the previous generation's range of 440MHz to 490MHz.

The 45W module also features a high-gain performance of 28dB that reduces input power requirement.

The MOSFET device is also voltage-controlled, eliminating the need for the current amplifier in the APC circuit. This results in fewer components and allows the APC current to be reduced from 200mA to <1mA.

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